Ultrafast Mosfet Driver
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Ultrafast Mosfet Driver
Littelfuse offers ultrafast single and dual low-side IGBT andMOSFET drivers from 1.5A to 30A peak drive current in various packages including 5-pin TO-220 and TO-263 power packages. The broad range of high-side and low-side, half-bridge,and 3-phase drivers accepts up to 600VDC input voltage.
IXYS, a Littelfuse Technology features their IX4426, IX4427, and IX4428 dual high-speed, low-side gate drivers. Each of the two outputs can source and sink 1.5 A of peak current with rise and fall times of less than 10 ns. The inputs of each driver are TTL and CMOS compatible, and are virtually immune to latch-up. Low propagation delay times and fast, matched rise and fall times make the IX4426, IX4427, and IX4428 ideal for high-frequency and high-power applications.
The IX4426 is configured as a dual inverting driver; the IX4427 is configured as a dual non-inverting driver; and the IX4428 is configured with one inverting driver and one non-inverting driver. All three devices are available in a standard 8-pin SOIC package.
IXYS Corporation (NASDAQ:IXYS), a leader in power semiconductors, mixed-signal and digital ICs for power conversion and motion control applications, announced today the introduction of the IXRFD615 ultrafast low-side RF MOSFET gate driver by its IXYS Colorado division.
The IXRFD615 is a CMOS high-speed, high-current gate driver specifically designed to drive MOSFETs in Class D and E RF applications as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths.
The IXRFD615 can source and sink 15 Amperes of peak current while producing voltage rise and fall times of less than 5 nanoseconds and minimum pulse widths of 8 nanoseconds. The input of the driver is compatible with TTL or CMOS and is fully immune to latch up over the entire operating range.
The SC1205H is a cost effective, High Drive Voltage, Dual MOSFET Driver designed for switching High and Low side Power MOSFETs. Each driver is capable of Ultra-fast rise/fall times as well as a 20ns max propagation delay from input transition to the gate of the power FETs.
The ultra-fast switching of power MOSFETs, in approx1ns, is very challenging. This is largely due to the parasitic inductance that is intrinsic to commercial packages used for both MOSFETs and drivers. Parasitic gate and source inductance not only limit the voltage rise time on the MOSFET internal gate structure but can also cause the gate voltage to oscillate. This paper describes a hybrid approach that substantially reduces the parasitic inductance between the driver and MOSFET gate as well as between the MOSFET source and its external connection. A flip chip assembly is used to directly attach the die-form power MOSFET and driver on a PCB. The parasitic inductances are significantly reduced by eliminating bond wires and minimizing lead length. The experimental results demonstrate ultra-fast switching of the power MOSFET with excellent control of the gate-source voltage.
A MOSFET driver is a type of power amplifier that accepts a low-power input from a controller IC and produces a high-current drive input for the gate of a high-power transistor such as an Insulated-Gate Bipolar Transistor (IGBT) or power MOSFET. MOSFET drivers are beneficial to MOSFET operation because the high-current drive provided to the MOSFET gate decreases the switching time between the gate ON/OFF stages which leads to increased MOSFET power and thermal efficiency.
Our diverse array of MOSFET drivers supports a wide range of applications ranging from DC/DC power supplies to a host of motor applications, all while promoting high design flexibility, system efficiency, and robust operation.
IXYS Corporation a power semiconductors, mixed-signal and digital ICs for power conversion and motion control applications company has announced the introduction of the IXRFD615 ultrafast low-side RF MOSFET gate driver by its IXYS Colorado division. The IXRFD615 is a CMOS high-speed, high-current gate driver specifically designed to drive MOSFETs in Class D and E RF applications as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths.
The IXRFD615 can source and sink 15 Amperes of peak current while producing voltage rise and fall times of less than 5ns and minimum pulse widths of 8ns. The input of the driver is compatible with TTL or CMOS and is fully immune to latch up over the entire operating range.
The MAX4426/MAX4427/MAX4428 are dual monolithic MOSFET drivers designed to translate TTL/CMOS inputs to high voltage/current outputs. The MAX4426 is a dual inverting power MOSFET driver. The MAX4427 is a dual noninverting power MOSFET driver, and the MAX4428 contains one inverting section and one noninverting section. Delay times are nearly independent of VDD (see Typical Operating Characteristics in the full data sheet). High-current output drivers rapidly charge and discharge the gate capacitance of even the largest power MOSFETs to within millivolts of the supply rails. This produces the power MOSFETs' minimum on resistance. The MAX4426/MAX4427/MAX4428's high speed minimizes power losses in switching power supplies and DC-DC converters. 153554b96e